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Freescale Semiconductor Technical Data
Document Number: MRFE6VP5600H Rev. 0, 12/2010
RF Power Field Effect Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. * Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type Pulsed (100 sec, 20% Duty Cycle) CW Pout (W) 600 Peak 600 Avg. f (MHz) 230 230 Gps (dB) 25.0 24.6 D (%) 74.6 75.2 IRL (dB) --18 --17
MRFE6VP5600HR6 MRFE6VP5600HSR6
1.8-600 MHz, 600 W CW, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
* Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness * 600 Watts CW Output Power * 600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 sec Features * Unmatched Input and Output Allowing Wide Frequency Range Utilization * Device can be used Single--Ended or in a Push--Pull Configuration * Qualified Up to a Maximum of 50 VDD Operation * Characterized from 30 V to 50 V for Extended Power Range * Suitable for Linear Application with Appropriate Biasing * Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Characterized with Series Equivalent Large--Signal Impedance Parameters * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12. Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Total Device Dissipation @ TC = 25C Derate above 25C Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC PD TJ Value --0.5, +130 --6.0, +10 -- 65 to +150 150 1667 8.33 225 Unit Vdc Vdc C C W W/C C
CASE 375D-05, STYLE 1 NI-1230 MRFE6VP5600HR6
CASE 375E-04, STYLE 1 NI-1230S MRFE6VP5600HSR6 PARTS ARE PUSH-PULL
RFin/VGS 3
1 RFout/VDS
RFout/VGS 4
2 RFout/VDS
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 68C, 600 W Pulsed, 100 sec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz Case Temperature 60C, 600 W CW, 100 mA, 230 MHz Symbol ZJC RJC Value (2,3) 0.022 0.12 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(c) Freescale Semiconductor, Inc., 2010. All rights reserved.
MRFE6VP5600HR6 MRFE6VP5600HSR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) B (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IGSS V(BR)DSS IDSS IDSS
Min -- 130 -- --
Typ -- -- -- --
Max 1 -- 10 20
Unit
Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mA) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 960 Adc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test) Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Adc Vdc Adc Adc
VGS(th) VGS(Q) VDS(on)
1.7 2.0 --
2.2 2.5 0.26
2.7 3.0 --
Vdc Vdc Vdc
Crss Coss Ciss
-- -- --
1.60 129 342
-- -- --
pF pF pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 600 W Peak (120 W Avg.), f = 230 MHz, Pulsed, 100 sec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss 1. Each side of device measured separately. Gps D IRL 23.5 73.5 -- 25.0 74.6 --18 26.5 -- --12 dB % dB
MRFE6VP5600HR6 MRFE6VP5600HSR6 2 RF Device Data Freescale Semiconductor
VBIAS
+ C10 C11 C12 C13 R1 Z11
COAX1
Z3 RF INPUT Z1 Z2 C1 Z4 C3 C2
Z5
Z7
Z9
L1
Z13
Z6
C4 Z8
C5 Z10
L2
Z14
Z12
COAX2 VBIAS
R2 + C6 C7 C8 C9
+ L3 Z19 Z17 Z15 Z21 Z23 Z25 C22 C23
+ C24
+ C25
VSUPPLY
COAX3 C16 C17 Z31 RF Z32 OUTPUT C21 Z27 Z29
DUT
C14
C15
C20
Z16
Z22 Z18 Z20 L4
Z24
Z26 C18 C19
Z28
Z30
COAX4
+ C26 C27
+ C28
+ C29
VSUPPLY
Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10
0.192 x 0.082 Microstrip 0.175 x 0.082 Microstrip 0.170 x 0.100 Microstrip 0.116 x 0.285 Microstrip 0.116 x 0.285 Microstrip 0.108 x 0.285 Microstrip
Z11*, Z12* Z13, Z14 Z15, Z16 Z17*, Z18* Z19*, Z20* Z21, Z22
0.872 x 0.058 Microstrip 0.412 x 0.726 Microstrip 0.371 x 0.507 Microstrip 0.466 x 0.363 Microstrip 1.187 x 0.154 Microstrip 0.104 x 0.507 Microstrip
Z23, Z24 Z25, Z26 Z27, Z28 Z29, Z30 Z31 Z32
1.251 x 0.300 Microstrip 0.127 x 0.300 Microstrip 0.058 x 0.300 Microstrip 0.058 x 0.300 Microstrip 0.186 x 0.082 Microstrip 0.179 x 0.082 Microstrip
* Line length includes microstrip bends
Figure 1. MRFE6VP5600HR6(HSR6) Test Circuit Schematic - Pulsed MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 3
C23 C10 C11 C12 C13 C22 COAX1 R1
C24
C25
COAX3 L3
C2 C4
L1 L2
C5
C14
C15
C16 C17 C18 C19 C20
C1
C3
C21
COAX2
R2
L4 COAX4 C26
C6
C7 C8
C9 MRFE6VP5600H Rev. 1 C27 C28 C29
Figure 2. MRFE6VP5600HR6(HSR6) Test Circuit Component Layout - Pulsed -
Table 5. MRFE6VP5600HR6(HSR6) Test Circuit Component Designations and Values - Pulsed Part C1 C2, C3 C4 C5 C6, C10 C7, C11 C8, C12 C9, C13, C22, C26 C14 C15 C16, C17, C18, C19 C20 C21 C23, C24, C25, C27, C28, C29 Coax1, 2, 3, 4 L1, L2 L3, L4 R1, R2 PCB Description 12 pF Chip Capacitor 27 pF Chip Capacitors 0.8--8.0 pF Variable Capacitor, Gigatrim 33 pF Chip Capacitor 22 F, 35 V Tantalum Capacitors 0.1 F Chip Capacitors 220 nF Chip Capacitors 1000 pF Chip Capacitors 36 pF Chip Capacitor 51 pF Chip Capacitor 240 pF Chip Capacitors 39 pF Chip Capacitor 10 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitors 25 Semi Rigid Coax, 2.2 Long 5 nH Inductors 6.6 nH Inductors 10 Chip Resistors 0.030, r = 2.55 Part Number ATC100B120JT500XT ATC100B270JT500XT 27291SL ATC100B330JT500XT T491X226K035AT CDR33BX104AKYS C1812C224K5RACTU ATC100B102JT50XT ATC100B360JT500XT ATC100B510GT500XT ATC100B241JT200XT ATC100B390JT500XT ATC100B100JT500XT MCGPR63V477M13X26--RH UT--141C--25 A02TKLC GA3093--ALC CRCW120610R0JNEA AD255A Manufacturer ATC ATC Johanson ATC Kemet AVX Kemet ATC ATC ATC ATC ATC ATC Multicomp Micro Coax Coilcraft Coilcraft Vishay Arlon
MRFE6VP5600HR6 MRFE6VP5600HSR6 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 Pout, OUTPUT POWER (dBm) PULSED Ciss C, CAPACITANCE (pF) 64 63 62 61 60 59 58 57 31 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle
100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10
Coss
P3dB = 58.3 dBm (679 W) P2dB = 58.2 dBm (664 W) P1dB = 58.0 dBm (632 W)
Ideal
Actual
Crss 1 0 10 20 30 40 50
32
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
33 34 35 Pin, INPUT POWER (dBm) PULSED
36
37
Note: Each side of device measured separately. Figure 3. Capacitance versus Drain-Source Voltage
27 26 Gps, POWER GAIN (dB) 25 24 23 22 21 20 40 D Gps VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 90 80 Gps, POWER GAIN (dB) 70 60 50 40 30 20 1000 D, DRAIN EFFICIENCY (%) 27 26 25 24 23 22 21 20 19 18 17 0
Figure 4. Pulsed Output Power versus Input Power
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle
50 V 45 V 40 V 35 V VDD = 30 V 100 200 300 400 500 600 700 Pout, OUTPUT POWER (WATTS) PULSED
100 Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power
90 80 D, DRAIN EFFICIENCY (%) 70 60 50 40 30 20 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 0 100 200 300 400 500 600 700 VDD = 30 V 35 V 40 V 45 V 50 V Gps, POWER GAIN (dB) 27 26 25 24 23 25_C 22 21 20 40 85_C
Figure 6. Pulsed Power Gain versus Output Power
90 85_C 80 D, DRAIN EFFICIENCY (%)
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle
25_C
Gps TC = --30_C
--30_C 70 60 50 40 D 30 20 1000
100 Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Drain Efficiency versus Output Power
Figure 8. Pulsed Power Gain and Drain Efficiency versus Output Power
MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
109 108 MTTF (HOURS) 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 600 W Avg., and D = 75.2%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 9. MTTF versus Junction Temperature -- CW
MRFE6VP5600HR6 MRFE6VP5600HSR6 6 RF Device Data Freescale Semiconductor
Zsource f = 230 MHz f = 230 MHz Zload
Zo = 10
VDD = 50 Vdc, IDQ = 100 mA, Pout = 600 W Peak f MHz 230 Zsource 1.78 + j5.45 Zload 2.75 + j5.30
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
--
Output Matching Network
-Z source Z
+ load
Figure 10. Series Equivalent Source and Load Impedance
MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
MRFE6VP5600HR6 MRFE6VP5600HSR6 8 RF Device Data Freescale Semiconductor
MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 9
MRFE6VP5600HR6 MRFE6VP5600HSR6 10 RF Device Data Freescale Semiconductor
MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRFE6VP5600H and MRFE6VP5600HS parts will be available for 2 years after release of MRFE6VP5600H and MRFE6VP5600HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRFE6VP5600H and MRFE6VP5600HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Dec. 2010 * Initial Release of Data Sheet Description
MRFE6VP5600HR6 MRFE6VP5600HSR6 12 RF Device Data Freescale Semiconductor
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MRFE6VP5600HR6 MRFE6VP5600HSR6
Document Number: RF Device Data MRFE6VP5600H Rev. 0, 12/2010 Freescale Semiconductor
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